Modified LOCOS isolation process for semiconductor devices

Details Modified LOCOS isolation process for semiconductor devices Modified LOCOS isolation process for semiconductor devices

1998-04-20

1999-12-14

Thomas, Tom

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438362, 438407, 438423, 257506, 257635, 257638, 257639, 257640, 257647, H01L 2176, H01L 21762

Patent

active

060017090

ABSTRACT:
A modified LOCOS isolation process for semiconductor devices is disclosed. First, a shielding layer is formed overlying a semiconductor substrate. The shielding layer is then patterned to form an opening that exposes a portion of the semiconductor substrate for forming a device isolation region. Next, oxygen ions are implanted with a tilt angle into the semiconductor substrate to form a doped region extending to the area under the margin of the shielding layer. A thermal oxidation process is then performed to form a field oxide layer on the semiconductor substrate. Since the oxidation rate of the area under the margin of the shielding layer is increased by the implanted oxygen ions, the bird's beak effect shown in conventional LOCOS process can be eliminated. After that, the shielding layer is removed to complete the fabricating process of this invention.

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