Modified horizontal bridgman method for growing GaAs single crys

Details Modified horizontal bridgman method for growing GaAs single crys Modified horizontal bridgman method for growing GaAs single crys

1988-12-28

1990-02-20

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566202, 156DIG70, 156DIG89, 156DIG81, C30B 1104, C30B 2940, C30B 2942, C30B 2944

Patent

active

049023764

ABSTRACT:
A process for growing a gallium arsenide single crystal from a polycrystalline gallium arsenide by the horizontal Bridgman technique includes (a) melting the polycrystalline gallium arsenide in a quartz boat which is placed in a quartz tube, at a temperature greater than 1238 deg C. but lower than the melting point of quartz, (b) decreasing the temperature of the melt of gallium arsenide from the seed/melt interface by moving a furnace to crystallize the melt, and (c) annealing the crystallized gallium arsenide during the crystal growth process at a temperature of 1100-1220 deg C.; wherein the above steps are carried out in the absence of an As vapor pressure controlling zone which is kept at a temperature of about 617 deg C. Due to the anealing step, the thermal stress is small and the dislocation hardly occurs. A short quartz tube can be employed due to the absence of the As zone.

REFERENCES:
patent: 3481711 (1969-12-01), Maruyama
patent: 3520810 (1970-07-01), Plaskett et al.
patent: 3623905 (1971-11-01), Akai et al.
patent: 3690847 (1972-09-01), Merkel et al.
patent: 3767473 (1973-10-01), Ayel et al.
patent: 3877883 (1975-04-01), Berkman et al.

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