Modified DARC stack for resist patterning

Details Modified DARC stack for resist patterning Modified DARC stack for resist patterning

2008-06-17

2011-12-27

Culbert, Roberts (Department: 1716)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C216S047000

Reexamination Certificate

active

08084366

ABSTRACT:
A method of making a device includes forming a device layer, forming an organic hard mask layer over the device layer, forming a first oxide hard mask layer over the organic hard mask layer, forming a DARC layer over the first oxide hard mask layer, forming a photoresist layer over the DARC layer, patterning the photoresist layer to form a photoresist pattern, and transferring the photoresist pattern to the device layer using the DARC layer, the first oxide hard mask layer and the organic hard mask layer.

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