Modification of pixelated photolithography masks based on...

Details Modification of pixelated photolithography masks based on... Modification of pixelated photolithography masks based on...

2008-01-29

2008-01-29

Dinh, Paul (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

07325223

ABSTRACT:
Faster synthesis of photolithography mask modifications is described. In one embodiment, the invention includes synthesizing a first binary photolithography mask, developing perturbations to an estimated electric field generated by the first mask in use, and synthesizing a second binary photolithography mask by applying the perturbations to the first mask.

REFERENCES:
patent: 7234130 (2007-06-01), Word et al.
patent: 2003/0103189 (2003-06-01), Neureuther et al.
patent: 2004/0122636 (2004-06-01), Adam
patent: 2005/0216181 (2005-09-01), Estkowski et al.
patent: 2005/0283747 (2005-12-01), Adam
patent: 2006/0040187 (2006-02-01), Troost et al.
Robert J. Socha, And Andrew R. Neureuther “Models for Characterizing Phase-Shift Defect in Optical Projection Printing” IEEE Transaction On Semiconductor Manufacturing, vol. 8, No. 2, May 1995 pp. 139-149.

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