Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1994-09-12
1997-04-01
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041922, C23C 1434
Patent
active
056162189
ABSTRACT:
A method for selectively choosing the magnetic properties of a sputter deposited recording layer of a magnetic recording medium comprises sputtering a target of metal underlayer material onto a substrate to deposit an underlayer film and selectively collimating the sputtered underlayer particles to vary the arrival energy and angular distribution of the sputter particles striking the substrate to selectively establish the orientation of the crystals making up the underlayer film. A magnetic metal film is then sputter deposited upon the underlayer film to form a magnetic recording layer, the magnetic metal film having a crystal texture and recording properties affected by the orientation of the crystals in the underlayer film. The magnetic properties of the magnetic recording layer are chosen by selectively collimating while sputter depositing the underlayer material. In an alternative embodiment of the present invention, both the underlayer film and the magnetic metal recording film are selectively collimated when deposited upon the substrate. A still further embodiment of the invention includes selectively collimating only the magnetic metal recording film.
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Komuro Matahiro; others, "Sputtering Device and Production of Magnetic Film" Japanese Abstracts, vol. 18, No. 361, Dated Jul. 7, 1994, Patent No. JP6093439.
Matereials Research Corporation
Nguyen Nam
Sony Corporation
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