Modeling circuit of a field-effect transistor reflecting...

Details Modeling circuit of a field-effect transistor reflecting... Modeling circuit of a field-effect transistor reflecting...

2011-04-26

2011-04-26

Proctor, Jason (Department: 2123)

Data processing: structural design, modeling, simulation, and em

Electrical analog simulator

Of electrical device or system

Reexamination Certificate

active

07933753

ABSTRACT:
A modeling circuit includes a field-effect transistor, a first current source, a first bipolar transistor, a second current source and a second bipolar transistor. The first bipolar transistor and the second bipolar transistor are parasitic bipolar transistors that are arranged symmetrically to each other. Therefore, the modeling circuit can be used in simulating the field effect transistors reflecting electrostatic-discharge characteristic regardless of the polarity of a source and a drain.

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Liou, Juin J., et al., “Design and Modeling of On-Chip Electrostatic Discharge (ESD) Protection Structures”, IEEE, May 2004, pp. 619-624, vol. 2, NIS, Serbia and Montenegro.

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