MOCVD selective deposition of C-axis oriented PB 5 GE 3 O 11...

Details MOCVD selective deposition of C-axis oriented PB 5 GE 3 O 11... MOCVD selective deposition of C-axis oriented PB 5 GE 3 O 11...

2007-01-02

2007-01-02

Talbot, Brian K. (Department: 1762)

Coating processes

Electrical product produced

Piezoelectric properties

C427S255150, C427S255190, C427S255280, C427S255320, C427S255230, C427S255700

Reexamination Certificate

active

10677007

ABSTRACT:
A method of selectively depositing a ferroelectric thin film on an indium-containing substrate in a ferroelectric device includes preparing a silicon substrate; depositing an indium-containing thin film on the substrate; patterning the indium containing thin film; annealing the structure; selectively depositing a ferroelectric layer by MOCVD; annealing the structure; and completing the ferroelectric device.

REFERENCES:
patent: 5573171 (1996-11-01), Kong et al.
patent: 6190925 (2001-02-01), Li et al.
patent: 6303502 (2001-10-01), Hsu et al.
patent: 6407422 (2002-06-01), Asano et al.
patent: 6475813 (2002-11-01), Li et al.
patent: 6483137 (2002-11-01), Li et al.
patent: 6495378 (2002-12-01), Li et al.
patent: 6503314 (2003-01-01), Li et al.
patent: 6616857 (2003-09-01), Li et al.
patent: 6664116 (2003-12-01), Li et al.
patent: 6794198 (2004-09-01), Li et al.
patent: 6825519 (2004-11-01), Li et al.
patent: 6887799 (2005-05-01), Li et al.
patent: 04-324837 (1992-11-01), None

Affiliated with

Also associated with

Rating

MOCVD selective deposition of C-axis oriented PB 5 GE 3 O 11... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MOCVD selective deposition of C-axis oriented PB 5 GE 3 O 11..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOCVD selective deposition of C-axis oriented PB 5 GE 3 O 11... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3726291