Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-22
2006-08-22
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S685000
Reexamination Certificate
active
07094691
ABSTRACT:
A method of forming a tungsten nitride thin film in an integrated circuit includes preparing a silicon substrate on a silicon wafer and placing the silicon wafer in a heatable chuck in a CVD vacuum chamber; placing a known quantity of a tungsten source in a variable-temperature bubbler to provide a gaseous tungsten source; setting the variable-temperature bubbler to a predetermined temperature; passing a carrier gas through the variable-temperature bubbler and carrying the gaseous tungsten source with the carrier gas into the CVD vacuum chamber; introducing a nitrogen-containing reactant gas into the CVD vacuum chamber; reacting the gaseous tungsten source and the nitrogen-containing reactant gas above the surface of the silicon wafer in a deposition process to deposit a WxNythin film on the surface of the silicon wafer; and completing the integrated circuit containing the WxNythin film.
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Yu et al. Critical Surface Reactions in the CVD of tungsten by WF6and WF6/SIH4Mixtures. Materials Research Society. 1989. pp 221-230.
Barrowcliff Robert
Evans David R.
Hsu Sheng Teng
Pan Wei
Cordeiro David
Curtin Joseph P.
Le Dung A.
Ripma David C.
Sharp Laboratories of America Inc.
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