MOCVD metal oxide for one transistor memory

Details MOCVD metal oxide for one transistor memory MOCVD metal oxide for one transistor memory

2000-06-06

2001-10-16

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S239000, C438S240000, C438S250000, C438S393000, C438S396000

Reexamination Certificate

active

06303502

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to very large scale and embedded non-volatile memory circuit, and specifically to the manufacture of a memory device using metal organic chemical vapor deposition (MOCVD) by providing a uniform MOCVD seed.
BACKGROUND OF THE INVENTION
Many single transistor ferroelectric memory devices, such as MFMOS, MFOS, MFMS, have been proposed, however, a single transistor memory integrated circuit has not been fabricated. This is because of the difficulty of depositing an appropriate ferroelectric material. Ferroelectric material may be deposited by spin-coating or metal organic chemical vapor deposition (MOCVD) techniques. The MOCVD technique has better composition control and better step coverage, and is more suitable for device application. However, the MOCVD deposition rate strongly depends on the nucleation formation. The density of nucleation seed also affects the morphology of the MOCVD thin film.
SUMMARY OF THE INVENTION
A method of fabricating a one-transistor memory, includes preparing a single crystal silicon substrate; forming a device area on the substrate; growing a gate oxide layer on the surface of the substrate; depositing a bottom electrode structure on the gate oxide layer; implanting ions to form a source region and a drain region and activating the implanted ions; spin coating the structure with a first ferroelectric layer having a thickness of between about 5 nm and 100 nm; depositing a second ferroelectric layer to a thickness of between about 50 nm and 300 nm; annealing the structure to prove ferroelectric c-axis orientation; etching the stricture to remove excess ferroelectric material; depositing a protective layer; depositing a layer of silicon oxide; and metallizing the structure.
It is an object of this invention to provide a uniform seed for MOCVD metal oxide ferroelectric thin film formation.
Another object of the invention is to provide an uniform seed on silicon wafer with device isolation and metal electrodes for MOCVD of ferroelectric material for single transistor memory device fabrication.


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