Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2000-04-13
2002-08-06
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S483000, C438S569000, C438S930000
Reexamination Certificate
active
06429103
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to apparatus and method for growing epitaxial layers of compound semiconductor material on a compound semiconductor substrate using Metal Organic Chemical Vapor Deposition techniques.
BACKGROUND OF THE INVENTION
At present, epitaxial layers for enhancement mode (Emode) HIGFET devices are grown directly on a substrate using the molecular beam epitaxy (MBE) process with only a GaAs buffer layer. MBE epitaxial growth is slow and expensive, which severely limits the quantity of available material and substantially adds to the cost of devices.
Attempts to grow Emode devices by the faster and cheaper Metal Organic Chemical Vapor Deposition (MOCVD) process have not been successful. Previous MOCVD-grown Emode devices have had poor repeatability and often high leakage currents, so high that they are unusable. Some success has been realized in the growth of depletion-mode FETs using MOCVD. See for example an article by N. Pan et al.,
J. Electron, Mat.
21, 199 (1992) and an article by Sasajima et al., “High Resistivity Oxygen-Doped AlGaAs for Power Devices”,
Proc. of MRS
, November 1997. However, it is commonly believed in the art that Emode HIGFET devices cannot be successfully grown by the MOCVD process.
Accordingly, it is highly desirable to provide Emode HIGFET devices by the MOCVD process and to provide a new method of forming high performance Emode epitaxial structures by the MOCVD process. Fabricating epitaxial layers of Emode devices using the MOCVD process will permit cost reduction and ensure an adequate supply of device-quality material.
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McMorrow et al., “Elimination of Charge-Enhancement Effects in a GaAs FETs with a Low-Temperature Grown GaAs Buffer Layer,” IEEE Transactions on Nuclear Science, vol. 42, No. 6, Dec. 1995, pp. 1837-1843.
Mihashi et al., Influence of Oxygen on the Threshold Current of AlGaAs Multiple Quantum Well Lasers Grown 141, Aug. 1994, Nos. 1/2, pp. 22-28.
Cody Nyles Wynn
Johnson Eric Shanks
Lindsay Jr. Walter L.
Motorola Inc.
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