MOCVD apparatus and method

Details MOCVD apparatus and method MOCVD apparatus and method

2006-11-28

2006-11-28

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C257SE21575

Reexamination Certificate

active

07141497

ABSTRACT:
An MOCVD apparatus includes a raw material supply section configured to supply a process raw material into a process chamber. The raw material supply section includes a bubbling unit that stores an organic metal raw material in a liquid state. A carrier gas line is configured to supply, into the bubbling unit, a carrier gas that causes the organic metal raw material in a liquid state to bubble up. A flow rate control portion is provided on the carrier gas line to control the carrier gas flow rate. The flow rate control portion includes a plurality of mass flow controllers, which are disposed in parallel with each other and have full-scales different from each other for flow rate control. The mass flow controllers are switched for use, in accordance with the carrier gas flow rate.

REFERENCES:
patent: 5966499 (1999-10-01), Hinkle et al.
patent: 6314992 (2001-11-01), Ohmi et al.
patent: 6581623 (2003-06-01), Carpenter et al.
patent: 2004/0247787 (2004-12-01), Mackie et al.
patent: 2333614 (1999-07-01), None
patent: 2002-246323 (2002-08-01), None

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