MNOS Type non-volatile memory device and method of manufacturing

Details MNOS Type non-volatile memory device and method of manufacturing MNOS Type non-volatile memory device and method of manufacturing

1982-10-18

1985-05-21

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365189, 357 235, G11C 1140

Patent

active

045190518

ABSTRACT:
The ratio of gases during chemical vapor deposition of a silicon nitride layer in an MNOS Memory device is gradially varied during the deposition process to achieve a silicon nitride layer having a trap state distribution which gradually decreases from the oxide-nitride interface to the oxide-metal interface.

REFERENCES:
patent: 4467452 (1984-08-01), Saito et al.

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