Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into...
Reexamination Certificate
2006-05-31
2011-10-25
Choi, Ling (Department: 1761)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
C438S558000, C257S607000, C106S287170, C106S287180, C106S287290
Reexamination Certificate
active
08043946
ABSTRACT:
A doping mixture for coating semiconductor substrates which are then subjected to a high temperature treatment to form a doped layer includes at least one p- or n-dopant, water and a mixture of two or more surfactants. At least one of the surfactants is nonionic. Also, provided are a method for producing such a doping mixture and the use thereof.
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Biro Daniel
Koriath Jörg
Voyer Catherine
Wanka Harald
Centrotherm Photovoltaics AG
Choi Ling
Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung
Heslin Rothenberg Farley & & Mesiti P.C.
Peets Monique
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