Mixed signal integrated circuit with improved isolation

Details Mixed signal integrated circuit with improved isolation Mixed signal integrated circuit with improved isolation

2005-06-21

2005-06-21

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S370000, C257S506000, C257S508000, C257S544000, C257S547000, C257S372000

Reexamination Certificate

active

06909150

ABSTRACT:
An integrated circuit having improved isolation includes a first circuit section formed in a substrate and a second circuit section formed in the substrate, the second circuit section being spaced laterally from the first circuit section. The integrated circuit further includes an isolation buried layer formed under at least a portion of the first circuit section, and a conductive layer formed on a surface of the substrate and electrically coupled to the buried layer and to a voltage reference, the conductive layer reducing an effective lateral resistance of the buried layer, whereby an isolation between the first and second circuit sections is increased. A second isolation buried layer can be formed under at least a portion of the second circuit section as well to provide further isolation between the first and second circuit sections.

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