Mixed-scale electronic interfaces

Details Mixed-scale electronic interfaces Mixed-scale electronic interfaces

2006-10-30

2010-06-22

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S164000, C438S742000, C257SE21476, C257SE23141

Reexamination Certificate

active

07741204

ABSTRACT:
Certain embodiments of the present invention are directed to a method of fabricating a mixed-scale electronic interface. A substrate is provided with a first set of conductive elements. A first layer of nanowires may be formed over the first set of conductive elements. A number of channels may be formed, with each of the channels extending diagonally through a number of the nanowires of the first layer. A number of pads may be formed, each of which is electrically interconnected with an underlying conductive element of the first set of conductive elements and one or more adjacent nanowires of the first layer of nanowires. The pads and corresponding electrically interconnected nanowires define a number of pad-interconnected-nanowire-units. Additional embodiments are directed to a method of forming a nanoimprinting mold and a method of selectively programming nanowire-to-conductive element electrical connections.

REFERENCES:
patent: 4335161 (1982-06-01), Luo
patent: 6407443 (2002-06-01), Chen et al.
patent: 7416993 (2008-08-01), Segal et al.
patent: 2004/0149978 (2004-08-01), Snider
patent: 2004/0181630 (2004-09-01), Jaiprakash et al.

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