Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-10-24
2006-10-24
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S438000, C438S199000
Reexamination Certificate
active
07125785
ABSTRACT:
The present disclosure relates, generally, to a semiconductor substrate with a planarized surface comprising mixed single-crystal orientation regions and/or mixed single-crystal semiconductor material regions, where each region is electrically isolated. In accordance with one embodiment of the disclosure CMOS devices on SOI regions are manufactured on semiconductors having different orientations. According to another embodiment, an SOI device is contemplated as having a plurality of semiconductor regions having at least one of a different semiconductor material, crystalline lattice constant or lattice strain. Methods and processes for fabricating the different embodiments of the invention is also disclosed.
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Cohen Guy M.
Reznicek Alexander
Saenger Katherine L.
Yang Min
Baumeister B. William
Duane Morris LLP
Reames Matthew L.
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