Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-12-01
2000-08-08
Dang, Thi
Coating apparatus
Gas or vapor deposition
With treating means
118715, 118723I, 156345, C23C 1600
Patent
active
060985682
ABSTRACT:
A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
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Cheung David
Fairbairn Kevin
Fodor Mark
Huang Judy
Mudholkar Mandar
Alejandro Luz
Applied Materials Inc.
Dang Thi
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