Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2009-02-06
2011-11-08
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257SE21295, C438S050000
Reexamination Certificate
active
08053265
ABSTRACT:
Alternative methods of constructing a vertically offset structure are disclosed. An embodiment includes forming a flexible layer having first and second end portions, an intermediate portion coupling the first and second portions, and upper and lower surfaces. The distance between the upper and lower surfaces at the intermediate portion is less than the distance between the upper and lower surfaces at the first and second end portions. The first end portion is bonded to a base member. The second end portion of the flexible layer is deflected until the second end portion contacts the base member. The second end portion is bonded to the base member.
REFERENCES:
patent: 5446616 (1995-08-01), Warren
patent: 6232150 (2001-05-01), Lin et al.
patent: 6369931 (2002-04-01), Funk et al.
patent: 6391742 (2002-05-01), Kawai
patent: 6756310 (2004-06-01), Kretschmann et al.
patent: 7481113 (2009-01-01), Seto
patent: 2003/0179064 (2003-09-01), Chua et al.
patent: 2005/0244099 (2005-11-01), Pasch et al.
patent: 2007/0115082 (2007-05-01), Schirmer et al.
patent: 2008/0074725 (2008-03-01), Pan
patent: 2009/0014296 (2009-01-01), Weber et al.
Foster Michael
Jafri Ijaz H.
Enad Christine
Honeywell International , Inc.
Lowe Graham & Jones PLLC
Smith Matthew
LandOfFree
Mitigation of high stress areas in vertically offset structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mitigation of high stress areas in vertically offset structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mitigation of high stress areas in vertically offset structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4281598