Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition
Patent
1996-03-04
1999-10-05
Tsang, Cecilia J.
Coating processes
Direct application of electrical, magnetic, wave, or...
Chemical vapor deposition
427 99, 427229, 427252, 427421, 118 50, 118 501, 118319, 118320, 118326, 118629, 118638, 118715, 118724, C23C 800
Patent
active
059620854
ABSTRACT:
A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
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Azuma Masamichi
Hayashi Shinichiro
McMillan Larry D.
Paz De Araujo Carlos A.
Delacroix-Muirheid C
Matsushita Electronics Corporation
Symetrix Corporation
Tsang Cecilia J.
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