MISFET semiconductor integrated circuit device

Details MISFET semiconductor integrated circuit device MISFET semiconductor integrated circuit device

1995-07-18

1999-05-18

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257366, 257369, 363 60, H01L29/772

Patent

active

059052910

ABSTRACT:
A semiconductor integrated circuit device comprises at least two MISFETs formed on a semiconductor substrate and connected in series in a diode connection. Each of the MISFETs has a source, a drain, a channel extending between the source and the drain, and a gate disposed over the channel through a gate insulating film. One of the MISFETs has a first threshold voltage, and the other of the MISFETs has a second threshold voltage lower than the first threshold voltage. A portion of the channel of the semiconductor substrate of each of the MISFETs has an impurity concentration equal to or less than 6.times.10.sup.14 atoms/cc.

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