MISFET including GaAs substrate and a Group II-VI gate insulator

Details MISFET including GaAs substrate and a Group II-VI gate insulator MISFET including GaAs substrate and a Group II-VI gate insulator

1992-07-08

1994-03-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257192, 257194, 257200, 257201, 257256, 257262, H01L 29161, H01L 29205, H01L 2980, H01L 2920

Patent

active

052948188

ABSTRACT:
A MISFET includes a GaAs substrate, a gate insulating film of a II-VI group compound including Zn, Mg, S, and Se epitaxially grown on the GaAs substrate, and a gate electrode formed on the gate insulating film.

REFERENCES:
patent: 4160261 (1979-07-01), Casey, Jr. et al.
patent: 4317127 (1982-02-01), Nishizawa

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