MIS type static memory cell and memory and storage process

Details MIS type static memory cell and memory and storage process MIS type static memory cell and memory and storage process

1989-04-10

1990-09-04

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365182, G11C 1140

Patent

active

049549898

ABSTRACT:
A static memory cell of the metal-insulator-semiconductor type, which can be used in the microelectronics field for producing random access memories for storing binary information. This MIS type memory cell is a random access static memory cell known under the abbreviation SRAM. A bistable flip-flop is formed by a MIS transistor and a parasitic bipolar transistor. The source and drain of the MIS transistor respectively formed by constituting the emitter and collector of the bipolar transistor. The region of the channel of the MIS transistor located between the source and drain serves as the base for the bipolar transistor. The base is completely isolated from the outside of the memory cell. The gate electrode of the MIS transistor is electrically isolated from the region of the channel. There is an addressing circuit for the flip-flop for storing binary information in the form of the absence or presence of current.

REFERENCES:
patent: 4032902 (1977-06-01), Herndon
patent: 4276616 (1981-06-01), Hennig
J. P. Colinge, "An SOI Voltage-Controlled Bipolar-MOS Device", IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 845-849.
IEEE Transactions on Nuclear Science, vol. NS-32, No. 6, Dec. 1985, pp. 4432-4437, IEEE, New York, US; G. E. Davis et al: "Transient Radiation Effects in SOI Memories".

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