MIS type semiconductor device and method for manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257345, 257346, 257408, H01L 2976, H01L 2994, H01L 31062

Patent

active

058775315

ABSTRACT:
A P-type impurity is doped by oblique ion implantation into N-type impurity diffusion layers formed respectively on both sides of a gate electrode of a Pch MOS transistor, thereby canceling the impurity of at least a portion of an N-type region overlapped by the gate electrode, to thereby suppress a rise in the threshold voltage of the P-channel type MIS transistor due to the N-type impurity diffusion layer and suppress fluctuations in the amount of current that can be made to flow and the current-driving capacity.

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Wolf et al., "Silicon Processing for the VLSI Era vol. 1: Process Technology", Lattice Press, pp. 292-293, 1986.

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