MIS transistor with gate sidewall insulating layer

Details MIS transistor with gate sidewall insulating layer MIS transistor with gate sidewall insulating layer

1993-02-26

1998-09-15

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257900, H01L 2976, H01L 2994, H01L 27088

Patent

active

058083472

ABSTRACT:
A MIS transistor has a semiconductor substrate of a first conduction type; a gate insulation film and a gate electrode which are selectively formed on the semiconductor substrate; an insulating film formed on the side surface of the gate electrode and on the semiconductor substrate; a first gate side wall layer provided on the upper surface and side surface of the insulating film and having a dielectric constant greater than that of the insulating film, the first gate side wall layer having a height smaller than that of the gate electrode; and a second gate side wall layer composed of an insulating film which covers the first gate side wall layer. This MIS transistor can be produced by a known LSI production technique employing self-alignment, without increasing the number of the steps of the process.

REFERENCES:
patent: 4545114 (1985-10-01), Ito et al.
patent: 4808543 (1989-02-01), Thomas et al.
patent: 4818334 (1989-04-01), Shuartzman et al.
patent: 4951100 (1990-08-01), Parrillo
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5013675 (1991-05-01), Shen et al.
patent: 5073514 (1991-12-01), Ito et al.
IEEE Electron Device Letters, vol. 11, No. 2, Feb. 1990, "Simple Gate-to-Drain Overlapped MOSFET's Using Poly Spacers for High Immunity to Channel Hot--Eletron Degradation" by Chen et al., pp. 78-81.

Affiliated with

Also associated with

Rating

MIS transistor with gate sidewall insulating layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS transistor with gate sidewall insulating layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS transistor with gate sidewall insulating layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-91349