MIS semiconductor device with polysilicon gate electrode

Details MIS semiconductor device with polysilicon gate electrode MIS semiconductor device with polysilicon gate electrode

1992-08-11

1994-11-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 64, 257412, H01L 2906, H01L 2978

Patent

active

053651090

ABSTRACT:
A MIS semiconductor device comprises, on a silicon wafer, a gate oxide layer, a polysilicon gate electrode comprising a gate layer of polysilicon of grain size of not less than 0.3 .mu.m doped with boron in a doping amount of not less than 3.times.10.sup.19 atoms/cm.sup.3, and a gate insulation layer, provided with metal electrodes.

REFERENCES:
patent: 4011105 (1977-03-01), Paivinen et al.
patent: 4214918 (1980-07-01), Gat et al.
patent: 4332076 (1982-06-01), Solo de Zaldivar
patent: 4479831 (1984-10-01), Sandow et al.
patent: 4536231 (1985-08-01), Kasten
patent: 4697333 (1987-10-01), Nakahara
patent: 4875944 (1989-10-01), Yoshida
patent: 5002618 (1991-03-01), Kanai et al.
patent: 5177578 (1993-01-01), Kakinoki et al.
patent: 5184200 (1993-02-01), Yamanabe

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