Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-02-17
2000-09-05
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257348, 257349, 257350, 257310, 257 59, 257 72, 257741, 257763, H01L 2900
Patent
active
061147281
ABSTRACT:
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
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Takemura Yasuhiko
Yamazaki Shunpei
Abraham Fetsum
Costellia Jeffrey L.
Semiconductor Energy Laboratory Co,. Ltd.
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