MIS semiconductor device formed by utilizing SOI substrate havin

Details MIS semiconductor device formed by utilizing SOI substrate havin MIS semiconductor device formed by utilizing SOI substrate havin

1991-07-08

1993-09-07

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257413, 257768, 257770, 257928, 257378, H01L 2978, H01L 2702

Patent

active

052432130

ABSTRACT:
The present invention is directed to a MIS semiconductor device having a semiconductor layer formed on an insulating substrate and a gate electrode formed on this semiconductor layer through a gate insulating film, which is provided with a semiconductor region of a second conductivity type or a metal layer formed adjacent to a source region of a first conductivity type but separated from a channel region, thereby suppressing degradation of breakdown voltage caused by impact ionization, which is a defect of the MIS semiconductor device formed on an SOI substrate, to improve the reliability of this kind of MIS semiconductor devices.

REFERENCES:
patent: 4371955 (1983-02-01), Sasaki
patent: 4879585 (1989-11-01), Usami

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