MIS semiconductor device and method of fabricating the same

Details MIS semiconductor device and method of fabricating the same MIS semiconductor device and method of fabricating the same

1996-09-26

1999-04-06

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, H01L 2100

Patent

active

058917667

ABSTRACT:
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.

REFERENCES:
patent: 4143388 (1979-03-01), Esaki et al.
patent: 4394182 (1983-07-01), Maddox, III
patent: 4469568 (1984-09-01), Kato et al.
patent: 4719183 (1988-01-01), Maekawa
patent: 4727044 (1988-02-01), Yamazaki
patent: 4751193 (1988-06-01), Myrick
patent: 4933298 (1990-06-01), Hasegawa
patent: 4997780 (1991-03-01), Szluk et al.
patent: 5183780 (1993-02-01), Noguchi et al.
patent: 5252502 (1993-10-01), Haveman
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5323047 (1994-06-01), Nguyen
patent: 5334544 (1994-08-01), Matsuoka et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5620905 (1997-04-01), Konuma et al.
patent: 5677207 (1997-10-01), Ha
patent: 5736414 (1998-04-01), Yamaguchi
patent: 5770486 (1998-06-01), Zhang et al.
patent: 5786241 (1998-07-01), Shimada
patent: 5789284 (1998-08-01), Yamazaki et al.

Affiliated with

Also associated with

Rating

MIS semiconductor device and method of fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with MIS semiconductor device and method of fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MIS semiconductor device and method of fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371016