Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-03
1999-05-11
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257491, 257773, H01L29/78
Patent
active
059030313
ABSTRACT:
In a first region of a semiconductor substrate, there are formed MIS transistors each composed of a gate insulating film, a gate electrode, and source/drain regions. In a second region of the semiconductor substrate, there is formed an impurity diffusion layer serving as a conductive layer. On an interlayer insulating film, there are formed an antenna interconnection connected to the gate electrodes and an interconnection for charge dissipation connected to the conductive layer. During the process of dry etching for forming the interconnections, charges move into the semiconductor substrate via the interconnection for charge dissipation. The deterioration of the gate insulating film caused by the injection of charges into the gate electrode is suppressed and the degradation of characteristics of the MIS transistor including a shift in threshold is also suppressed. Even in the case where a floating interconnection region is present contiguously to the antenna interconnection, the provision of the interconnection for charge dissipation reduces the amount of shift in the threshold of each of the MIS transistors and equalizes the respective thresholds of the MIS transistors.
REFERENCES:
patent: 5557127 (1996-09-01), Ajit et al.
patent: 5629552 (1997-05-01), Zommer
patent: 5650651 (1997-07-01), Bui
Arai Masatoshi
Eriguchi Koji
Nakabayashi Takashi
Yabu Toshiki
Yamada Takayuki
Matsushita Electric - Industrial Co., Ltd.
Monin, Jr. Donald L.
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