Mirror bit memory device applying a gate voltage alternately...

Details Mirror bit memory device applying a gate voltage alternately... Mirror bit memory device applying a gate voltage alternately...

2011-06-07

2011-06-07

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257SE21662, C257SE21679, C438S257000, C438S288000

Reexamination Certificate

active

07956424

ABSTRACT:
A semiconductor device and a method for manufacturing thereof are provided. The semiconductor device includes: an ONO film including a charge storage layer on a semiconductor substrate; a plurality of bit lines each extending inside the semiconductor substrate; a plurality of interspaces each interposed between the adjacent bit lines; a plurality of gates each provided along the bit line on the ONO film above the interspaces; and a plurality of word lines electrically coupled with the corresponding gates formed on one of the interspaces, each extending to intersect with the bit lines. The two gates adjacent with each other in a width direction of the bit line are connected to different word lines.

REFERENCES:
patent: 6545893 (2003-04-01), Kunikiyo

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