Minority carrier semiconductor devices with improved stability

Details Minority carrier semiconductor devices with improved stability Minority carrier semiconductor devices with improved stability

1997-02-18

1999-06-01

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257611, 257612, 257 96, 257102, H01L 3300, H01L 29167

Patent

active

059090510

ABSTRACT:
A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active region, which impurities act as a barrier to the degradation process, particularly undesired defect formation and propagation. A preferred embodiment of the present invention uses O doping of III-V optoelectronic devices during an epitaxial growth process to improve the operating reliability of the devices.

REFERENCES:
patent: 3806774 (1974-04-01), Hartman et al.
patent: 3812516 (1974-05-01), Hayashi
patent: 3936322 (1976-02-01), Blum et al.
patent: 4160261 (1979-07-01), Casey, Jr. et al.
patent: 4297783 (1981-11-01), Casey, Jr. et al.
patent: 4610731 (1986-09-01), Chevallier et al.
patent: 4719497 (1988-01-01), Tsai

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