Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S291000, C257SE31054
Reexamination Certificate
active
07151287
ABSTRACT:
In one embodiment, an image sensor for an x-ray imager includes a photodiode and a readout circuit. A deep well formed below the readout circuit may be configured as a diode to drain away parasitic electrons, which would otherwise induce noise in images. The parasitic electrons may be drained away to a power supply or a measuring circuit for dosimetrie purposes, for example.
REFERENCES:
patent: 6545303 (2003-04-01), Scheffer
patent: 6608337 (2003-08-01), Hynecek
patent: 6683360 (2004-01-01), Dierickx
patent: 6686220 (2004-02-01), Rhodes et al.
patent: 6690074 (2004-02-01), Dierickx
patent: 6815791 (2004-11-01), Dierickx
patent: 6838714 (2005-01-01), Rhodes et al.
Scheffer Danny
Walschap Tom A.
Cypress Semiconductor Corporation
Okamoto & Benedicto LLP
Potter Roy
LandOfFree
Minimizing the effect of directly converted x-rays in x-ray... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Minimizing the effect of directly converted x-rays in x-ray..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Minimizing the effect of directly converted x-rays in x-ray... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3720444