Minimizing the effect of 1/ƒ noise with a MEMS flux...

Details Minimizing the effect of 1/ƒ noise with a MEMS flux... Minimizing the effect of 1/ƒ noise with a MEMS flux...

2007-03-27

2007-03-27

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S073000, C324S244000

Reexamination Certificate

active

11226403

ABSTRACT:
A method of fabricating a MEMS device includes forming a magnetic sensor over a SOI wafer which may include an epoxy layer; forming a pair of MEMS flux concentrators sandwiching the magnetic sensor; connecting an electrostatic comb drive to each of the flux concentrators; connecting a spring to the flux concentrators and the comb drive; performing a plurality of DRIE processes on the SOI wafer; and releasing the flux concentrators, the comb drive, and the spring from the SOI wafer. Another embodiment includes forming adhesive bumps and a magnetic sensor on a first wafer; forming a second wafer; forming a pair of MEMS flux concentrators, a pair of electrostatic comb drives, and at least one spring on the second wafer; bonding the second wafer to the adhesive bumps; and compressing the adhesive bumps using non-thermal means such as pressure only.

REFERENCES:
patent: 6501268 (2002-12-01), Edelstein et al.
patent: 6670809 (2003-12-01), Edelstein et al.

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