Minimizing overetch during a chemical etching process

Details Minimizing overetch during a chemical etching process Minimizing overetch during a chemical etching process

1994-06-30

1996-03-26

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 216 86, G01N 2746, H01L 2100

Patent

active

055017665

ABSTRACT:
A contactless method and apparatus for real-time in-situ monitoring of a chemical etching process to minimize overetch of at least one wafer in a wet chemical etchant bath are disclosed. The method comprises the steps of providing two conductive electrodes in the wet chemical bath, wherein the two electrodes are proximate to but not in contact with a wafer; monitoring an electrical characteristic between the two electrodes as a function of time in the etchant bath of the at least one wafer, wherein a prescribed change in the electrical characteristic is indicative of a prescribed condition of the etching process; detecting a minimum and maximum value of the electrical characteristic during etching; determining the times of the minimum and maximum values; and comparing the times of the minimum and maximum values to determine an overetch value. The overetch value may be compared to a desired value to control the etching process. Such a method and the apparatus therefor are particularly useful in a wet chemical etch station.

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