Minimization of strain in single crystals

Details Minimization of strain in single crystals Minimization of strain in single crystals

1979-10-12

1981-11-10

Clements, Gregory N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG70, C30B 2702

Patent

active

042996503

ABSTRACT:
Single crystals are conveniently produced by directional solidification of a liquid body under a pressurized atmosphere and, preferably, under a liquid encapsulating layer to minimize loss due to volatilization. Such fabrication entails a concern with internal stress in a grown crystal in the interest, e.g., of minimization of breakage of wafers cut from a crystal. According to the invention, minimization of stress is accomplished by means of a post-growth annealing step during which pressure is reduced substantially and, in particular, preferably to a pressure which does not exceed 50 percent of a pressure at which a constituent of the liquid body volatilizes.
The method may be applied for producing single crystals of semiconductor materials as may be used as device substrates. In particular, the method is beneficial, e.g., for producing high-quality doped or undoped InP, GaP, and GaAs single crystals.

REFERENCES:
patent: 3647389 (1972-03-01), Weiner
patent: 4083748 (1978-04-01), Gault
Pamplin, "Crystal Growth", Pergamon Press, New York, Mar. 1975, pp. 515 and 518.
Fischer, "Techniques for Melt-Growth", Appearing Journal of the Electrochemical Society, Feb. 1970, vol. 117, No. 2, pp. 41-47.
"Liquid Encapsulation", Mullin et al., Published in J. of Crystal Growth, Mar. 1968, vol. 3, #4, pp. 281-285.
"Liquid Encapsulation", Bachmann et al., Published in J. of Electronic Material, Apr. 1975, vol. 4, #2, pp. 389-406.
Henry et al., "InP Growth", Published in J. of Electronic Material, vol. 7, No. 5, Jul. 1978, pp. 647-657.
Buehler, "Simple Pressure Chambers", Published in J. of Crystal Growth, vol. 43, Jan. 1978, pp. 584-588.
Steinemann et al., "Growth Peculiarities", Published in Solid State Electronics, vol. 6, Jun. 1963, pp. 597-604.
Marshall et al., "Growth of InP Crystals", Published in J. of Crystal Growth", vol. 44, Apr. 1978, pp. 651-652.

Affiliated with

Also associated with

Rating

Minimization of strain in single crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Minimization of strain in single crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Minimization of strain in single crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2361249