Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-10-16
2007-10-16
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S117000, C365S206000
Reexamination Certificate
active
11171663
ABSTRACT:
The effects of a self-erase phenomenon when accessing imprinted ferroelectric memory cells that have non-conductive electrode interfaces that reduce remnant polarization and decrease signal margin are eliminated. A self-erase control pulse asserted after an access pulse is utilized. The self-erase control pulse has a magnitude sufficient to offset a remnant charge on the non-conductive electrode interfaces after the removal of the access pulse.
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patent: 2005/0070032 (2005-03-01), Richards et al.
Coulson et al—U.S. Appl. No. 10/973,580, filed Oct. 25, 2004—Polymer De-Imprint Circuit Using Negative Voltage.
Lueker Jonathan
Windlass Hitesh
Hoang Huan
Intel Corporation
Wheeler Cyndi M.
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