Miniaturized virtual grounding nonvolatile semiconductor...

Details Miniaturized virtual grounding nonvolatile semiconductor... Miniaturized virtual grounding nonvolatile semiconductor...

2005-09-30

2008-08-12

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C365S185010

Reexamination Certificate

active

07411242

ABSTRACT:
The object of the present invention is to provide a new nonvolatile semiconductor memory device and its manufacturing method for the purpose of miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and boosting the yield. In a memory cell according to the present invention, a floating gate's two end faces perpendicular to a word line and channel are partly placed over the top of a third gate via a dielectric film. The present invention can reduce the memory cell area of a nonvolatile semiconductor memory device, increase the operating speed, and enhances the yield.

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patent: 6759706 (2004-07-01), Kobayashi
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patent: 2001-028428 (2001-01-01), None
patent: 2001-085541 (2001-03-01), None

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