Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2002-11-12
2004-02-24
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257S434000, C438S057000, C438S060000, C438S116000
Reexamination Certificate
active
06696738
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the invention
The invention relates to an image sensor, and in particular to a miniaturized image sensor that may be manufactured easily.
2. Description of the Related Art
Referring to
FIG. 1
, a conventional image sensor includes a substrate
10
, a frame layer
18
, a photosensitive chip
26
, a plurality of wires
28
and a transparent layer
34
. The substrate
10
has a first surface
12
formed with signal input terminals
15
and a second surface
14
formed with signal output terminals
16
which are electrically connected to a printed circuit board (not shown). The frame layer
18
has an upper surface
20
and a lower surface
22
, which is bonded to the first surface
12
of the substrate
10
to form a cavity
24
together with the substrate
10
. The photosensitive chip
26
is arranged within the cavity
24
defined by the substrate
10
and the frame layer
18
and is mounted to the first surface
12
of the substrate
10
. Each of the wires
28
has a first terminal
30
electrically connected to the photosensitive chip
26
and a second terminal
32
electrically connected to a corresponding signal input terminal
15
of the substrate
10
. The transparent layer
34
is disposed on the upper surface
20
of the frame layer
18
.
When the photosensitive chip
26
is made larger, the gap between the chip
26
and the frame layer
18
is shortened. So, it is difficult to bond and electrically connect the wires
28
to the signal input terminals
15
of the substrate
10
owing to the shortened gap. It is possible to enlarge the substrate
10
. However, enlarging the substrate
10
cannot meet the miniaturized requirement.
Furthermore, a substrate
10
has to be prepared in advance, traces have to be formed on the substrate
10
, and a frame layer
18
has to be adhered onto the substrate
10
. Consequently, the manufacturing processes are complicated and the material costs are relatively high.
In view of the above-mentioned problems, it is therefore an object of the invention to provide a miniaturized image sensor that may be made conveniently.
SUMMARY OF THE INVENTION
An object of the invention is to provide a miniaturized image sensor that is easy to be manufactured with a high yield.
Another object of the invention is to provide a miniaturized image sensor that may be manufactured with lower costs.
Still another object of the invention is to provide a miniaturized image sensor having a relatively small height.
To achieve the above-mentioned objects, an image sensor of the invention includes a substrate, a frame layer, a photosensitive chip and a transparent layer. The substrate is composed of plural spaced metal sheets. Each metal sheet includes a first board, a second board and a third board connecting the first board to the second board. The first and second boards are located at different heights. The frame layer has an upper surface and a lower surface. The frame layer covers and seals the metal sheets while exposes bottom surfaces of the second boards of the metal sheets. The frame layer is formed with a chamber on the lower surface thereof. Bottom surfaces of the first boards of the metal sheets are exposed through the chamber, and a transparent region communicating with the chamber is formed on the upper surface of the frame layer. The photosensitive chip is formed with a plurality of bonding pads and disposed within the chamber. The bonding pads respectively contact the bottom surfaces of the first boards of the substrate in a flip-chip manner for signal transmission from the photosensitive chip, which receives optical signals passing through the transparent region of the frame layer. The transparent layer is mounted on the upper surface of the frame layer to cover the transparent region of the frame layer.
Accordingly, the overall height of the package may be reduced because the photosensitive chip is disposed within the chamber and is electrically connected to the substrate in a flip-chip manner. Furthermore, the manufacturing processes are more convenient because the metal sheets and the frame layer are formed integrally and no traces have to be formed on the substrate.
REFERENCES:
patent: 5962810 (1999-10-01), Glenn
patent: 6492699 (2002-12-01), Glenn et al.
Tseng Kuo-Tai
Tu Hsiu Wen
Kang Donghee
Kingpak Technology Inc.
Pro-Techtor Inter-national Services
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