Miniaturization of a contact hole in a semiconductor device

Details Miniaturization of a contact hole in a semiconductor device Miniaturization of a contact hole in a semiconductor device

1989-08-01

1991-05-07

Hille, Rolf

357 65, 357 71, H01L 2348, H01L 2944, H01L 2952, H01L 2962

Patent

active

050141090

ABSTRACT:
The present invention provides a semiconductor device, comprising a substrate, a first insulation layer formed on the substrate, a first wiring layer formed on the first insulation layer, a second insulation layer formed on the first wiring layer and having a contact hole, and a third insulation layer formed on the second insulation layer, said third insulation layer being in contact with the first wiring layer via the contact hole.

REFERENCES:
patent: 4484209 (1984-11-01), Uchida
patent: 4523216 (1985-06-01), Shiotari
patent: 4617193 (1986-10-01), Wu
patent: 4722910 (1988-02-01), Yasaitis
patent: 4737831 (1988-04-01), Iwai
patent: 4772567 (1988-09-01), Hirao
patent: 4853894 (1989-08-01), Yamanaka et al.
IBM Technical Disclosure Bulletin, vol. 20, No. 1, Jun. 1977, J. A. Bialko et al., "Reducing Interlevel Shorts in Sputtered Insulators".
IBM Technical Disclosure Bulletin, vol. 25, No. 9, Feb. 1983, C. G. Jambotkar, "Method to Realize Submicrometer-Wide Images".

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