Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2001-07-10
2004-03-09
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S432000, C257S434000, C257S462000, C257S737000, C257S738000, C257S774000, C257S911000
Reexamination Certificate
active
06703689
ABSTRACT:
Japanese Patent Application 2000-209352, filed Jul. 11, 2000, and Japanese Patent Application 2001-165017, filed May 31, 2001 are hereby incorporated by reference in their entirety.
TECHNICAL FIELD
The present invention relates to an optical element and method of manufacturing the optical element, and to an electronic instrument.
BACKGROUND
FIG. 16
is an enlarged sectional view of a conventional optical element package.
This conventional optical element package
200
includes a ceramic package
204
in which leads
202
are brazed to laminated ceramics. An optical element
208
is fixed on a mounting portion
206
of the ceramic package
204
by a die bond material
210
. Electrodes
212
of the optical element
208
and electrodes
214
of the ceramic package
204
are electrically connected by wire bonding. Over the optical element
208
, a lid material (optical glass)
218
is disposed. The lid material
218
is fixed to a step
216
at the recessed edge of the ceramic package
204
by low melting point glass
220
, and seals the cavity of the ceramic package
204
.
Thus conventionally the optical element
208
is laminated on the ceramic package
204
, and the electrodes are wire bonded together, for which reason the area of the optical element package
200
is inevitably larger than the optically active area after packaging, resulting in a limit to the increase of mounting density.
The ceramic package
204
has a high cost of materials, and also since the manufacturing procedure is complicated, the costs are further increased.
SUMMARY
A method of manufacturing an optical element according to the present invention comprises the steps of:
forming a through hole in a semiconductor element which has an optical section and an electrode electrically connected to the optical section; and
forming a conductive layer extending from a first surface of the semiconductor element on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.
An optical element according to the present invention comprises a semiconductor chip which has an optical section and an electrode electrically connected to the optical section,
wherein the semiconductor chip includes a through hole, and a conductive layer extending from a first surface of the semiconductor chip on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.
An electronic instrument according to the present invention comprises an optical element which includes a semiconductor chip having an optical section and an electrode electrically connected to the optical section,
wherein the semiconductor chip has a through hole, and a conductive layer formed from a first surface of the semiconductor chip on which the optical section is formed, through an inner wall surface of the through hole, to a second surface opposite to the first surface.
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Oliff & Berridg,e PLC
Seiko Epson Corporation
Soward Ida M.
Zarabian Amir
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