MIM capacitor with a cap layer over the conductive plates

Details MIM capacitor with a cap layer over the conductive plates MIM capacitor with a cap layer over the conductive plates

2005-08-23

2008-10-14

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257SE21008, C257SE21009

Reexamination Certificate

active

07436016

ABSTRACT:
A method for forming a MIM capacitor and a MIM capacitor device formed by same. A preferred embodiment comprises selectively forming a first cap layer over a wafer including a MIM capacitor bottom plate, and depositing an insulating layer over the MIM capacitor bottom plate. The insulating layer is patterned with a MIM capacitor top plate pattern, and a MIM dielectric material is deposited over the patterned insulating layer. A conductive material is deposited over the MIM dielectric material, and the wafer is planarized to remove the conductive material and MIM dielectric material from the top surface of the insulating layer and form a MIM capacitor top plate. A second cap layer is selectively formed over the MIM capacitor top plate.

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