MIM capacitor structure and fabricating method thereof

Details MIM capacitor structure and fabricating method thereof MIM capacitor structure and fabricating method thereof

2011-04-05

2011-04-05

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21647

Reexamination Certificate

active

07919802

ABSTRACT:
A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor opening is formed on the first dielectric layer, in which the capacitor opening is situated directly above the first damascene conductor. Next, an MIM capacitor having a top plate and a bottom plate is created within the capacitor opening, in which the bottom plate of the MIM capacitor is electrically connected to the first damascene conductor. Next, a third dielectric layer is deposited on the second dielectric layer and the MIM capacitor, and at least one second damascene conductor is formed within part of the third dielectric layer, in which the second damascene conductor is electrically connected to the top plate of the MIM capacitor.

REFERENCES:
patent: 6081021 (2000-06-01), Gambino et al.
patent: 6232197 (2001-05-01), Tsai
patent: 6504205 (2003-01-01), Hsue et al.
patent: 6596581 (2003-07-01), Park et al.
patent: 6746914 (2004-06-01), Kai
patent: 2003/0211731 (2003-11-01), Kai et al.

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