Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-18
2006-04-18
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S531000, C257S532000, C361S301200, C361S301400, C361S303000
Reexamination Certificate
active
07030443
ABSTRACT:
A MIM (metal-insulator-metal) capacitor is provided with a substrate; a first metal area; a second metal area formed between the substrate and the first metal area; and a first insulating layer formed between the first metal area and the second metal area; wherein a capacitance value is determined by opposing surface areas of the first metal area and the second metal area; and the MIM capacitor is further provided with: a third metal area formed between the second metal area and the substrate; and a second insulating layer formed between the third metal area and the second metal area; wherein the third metal area is connected to a ground potential.
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Hino Takuo
Minami Yoshihisa
Gebremariam Samuel A.
Hamre Schumann Mueller & Larson P.C.
Lee Eddie
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