Microwave rotatable sputtering deposition

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Reexamination Certificate

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Details

C204S298110, C204S298160, C204S298170, C204S298210, C204S298220

Reexamination Certificate

active

08057649

ABSTRACT:
Disclosed is an invention that uses a coaxial microwave antenna as a primary plasma source in PVD. The coaxial microwave antenna is positioned inside a sputtering target. Instead of using a cathode assist in sputtering, microwaves generated from the coaxial microwave antenna may leak through the sputtering target that comprises a dielectric material to form microwave plasma outside the sputtering target. To further enhance plasma density, a magnetron or a plurality of magnetrons may be added inside the target to help confine secondary electrons. An electric potential may be formed between adjacent magnetrons and may further enhance ionization. To achieve directional control of the generated microwaves, a shield that comprises a dielectric material or dielectric material coated metal may be added proximate the coaxial microwave antenna. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency.

REFERENCES:
patent: 3999918 (1976-12-01), Landsman
patent: 4185252 (1980-01-01), Gerlach
patent: 4374158 (1983-02-01), Taniguchi et al.
patent: 4511520 (1985-04-01), Bowen
patent: 4521447 (1985-06-01), Ovshinsky et al.
patent: 4545646 (1985-10-01), Chern et al.
patent: 4927704 (1990-05-01), Reed et al.
patent: 4953498 (1990-09-01), Hashizume et al.
patent: 5006218 (1991-04-01), Yoshida et al.
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5242566 (1993-09-01), Parker
patent: 5304277 (1994-04-01), Ohara et al.
patent: 5387288 (1995-02-01), Shatas
patent: 5527391 (1996-06-01), Echizen et al.
patent: 5643638 (1997-07-01), Otto et al.
patent: 5672211 (1997-09-01), Mai et al.
patent: 5688382 (1997-11-01), Besen et al.
patent: 5749966 (1998-05-01), Shates
patent: 5900699 (1999-05-01), Samukawa et al.
patent: 5965246 (1999-10-01), Guiselin et al.
patent: 5985102 (1999-11-01), Leiphart
patent: 5990984 (1999-11-01), Meredith et al.
patent: 6061077 (2000-05-01), Kashiwaya et al.
patent: 6096389 (2000-08-01), Kanai
patent: 6121930 (2000-09-01), Grangeat et al.
patent: 6238527 (2001-05-01), Sone et al.
patent: 6290825 (2001-09-01), Fu
patent: 6306265 (2001-10-01), Fu et al.
patent: 6311638 (2001-11-01), Ishii et al.
patent: 6340417 (2002-01-01), Krivokapic
patent: 6357385 (2002-03-01), Ohmi et al.
patent: 6424298 (2002-07-01), Nishikawa et al.
patent: 6620296 (2003-09-01), Gogh et al.
patent: 6805779 (2004-10-01), Chistyakov
patent: 6806651 (2004-10-01), Chistyakov
patent: 6853142 (2005-02-01), Chistyakov
patent: 6868800 (2005-03-01), Moroz
patent: 6896773 (2005-05-01), Chistyakov
patent: 7166661 (2007-01-01), Kuramoto et al.
patent: 7390573 (2008-06-01), Korevaar et al.
patent: 7459182 (2008-12-01), Xiong et al.
patent: 7815982 (2010-10-01), Iwanaga
patent: 2001/0025607 (2001-10-01), Lebar et al.
patent: 2002/0041044 (2002-04-01), Saito et al.
patent: 2002/0092766 (2002-07-01), Lampkin
patent: 2002/0125423 (2002-09-01), Ebeling et al.
patent: 2003/0072932 (2003-04-01), Gandon
patent: 2003/0150846 (2003-08-01), Ishii et al.
patent: 2003/0168172 (2003-09-01), Glukhoy
patent: 2003/0183518 (2003-10-01), Glocker et al.
patent: 2003/0209422 (2003-11-01), Wang et al.
patent: 2004/0011466 (2004-01-01), Matsumoto et al.
patent: 2004/0265507 (2004-12-01), Xiong et al.
patent: 2005/0121835 (2005-06-01), Herod et al.
patent: 2005/0211170 (2005-09-01), Hanawa et al.
patent: 2006/0078717 (2006-04-01), Yamaya et al.
patent: 2006/0166515 (2006-07-01), Karim et al.
patent: 2006/0191478 (2006-08-01), Gondhalekar et al.
patent: 2006/0196766 (2006-09-01), Chen
patent: 2006/0208634 (2006-09-01), Schaepkens et al.
patent: 2006/0240232 (2006-10-01), Faris
patent: 2007/0045103 (2007-03-01), Lee et al.
patent: 2007/0048509 (2007-03-01), Yoneyama et al.
patent: 2007/0080056 (2007-04-01), German et al.
patent: 2007/0102634 (2007-05-01), Frey et al.
patent: 2007/0119546 (2007-05-01), Collins et al.
patent: 2007/0160822 (2007-07-01), Bristow et al.
patent: 2007/0181145 (2007-08-01), Ishizuka et al.
patent: 2007/0218264 (2007-09-01), Gueneau et al.
patent: 2008/0118734 (2008-05-01), Goodwin et al.
patent: 2008/0226924 (2008-09-01), Okubo et al.
patent: 2009/0232977 (2009-09-01), Morinaga et al.
patent: 2009/0238993 (2009-09-01), Stowell et al.
patent: 2010/0078320 (2010-04-01), Stowell
patent: 2011/0076420 (2011-03-01), Stowell
patent: 2011/0076422 (2011-03-01), Stowell
patent: 02050960 (1990-02-01), None
patent: 05-263223 (1993-10-01), None
patent: 06-017247 (1994-01-01), None
patent: 06-102827 (1994-12-01), None
patent: 08009780 (1996-01-01), None
patent: 2001-126899 (2001-05-01), None
patent: 2002-004044 (2002-01-01), None
patent: 2005-508728 (2005-04-01), None
patent: 2007-516347 (2007-06-01), None
patent: 10-2007-0112210 (2007-11-01), None
patent: WO 99/035302 (1999-07-01), None
patent: WO 2007-096482 (2007-08-01), None
U.S. Appl. No. 12/833,473, filed Jul. 9, 2010, Stowell.
U.S. Appl. No. 12/833,524, filed Jul. 9, 2010, Stowell.
U.S. Appl. No. 12/833,571, filed Jul. 9, 2010, Stowell et al.
PCT International Search Report and Written Opinion mailed Dec. 18, 2009; International Application No. PCT/US2009/042891; 10 pages.
PCT International Search Report and Written Opinion mailed Jan. 12, 2010; International Application No. PCT/US2009/043986; 10 pages.
PCT International Search Report and Written Opinion mailed Apr. 7, 2010; International Application No. PCT/US2009/055626, 12 pages.
Dickson, M. et al., “Radial uniformity of an external-coil ionized physical vapor deposition source,” J. Vac. Sci. Technol. B 16(2), Mar./Apr. 1998, pp. 523-531.
PCT International Search Report and Written Opinion mailed Sep. 25, 2009; International Application No. PCT/US2009/035325, 10 pages.
Zajickova, “Deposition of Protective Coatings in RF Organosilicon Discharges,” Jan. 31, 2007, Institute of Physics Publishing, pp. 123-132.
PCT International Search Report and Written Opinion mailed Sep. 15, 2009; International Application No. PCT/US2009/034551, 12 pages.
PCT International Search Report and Written Opinion mailed Nov. 4, 2009; International Application No. PCT/US2009/044213, 12 pages.
U.S. Appl. No. 12/050,373, filed Mar. 18, 2008, Stowell et al.
U.S. Appl. No. 12/070,660, filed Feb. 20, 2008, Stowell et al.
U.S. Appl. No. 12/077,375, filed Mar. 19, 2008, Stowell et al.
U.S. Appl. No. 12/120,391, filed May 14, 2008, Stowell et al.
U.S. Appl. No. 12/238,685, filed Sep. 26, 2008, Stowell.
U.S. Appl. No. 12/238,664, filed Sep. 26, 2008, Stowell.
Author Unknown, “Ultrafine Zinc Oxide,” Sumitomo Osaka Cement Co., Ltd., 2 pages, no date.
Author Unknown, “Zinc Oxide Profile,” obtained on Oct. 15, 2007 from website http://www.mountainroseherbs.com/learn/zinc—oxide.php, 2 pages.
Erlat, Ahmet G., et al., “Morphology and gas barrier properties of thing SiOx coatings and polycarbonate: Correlations with plasma-enhanced chemical vapor deposition conditions,” J. Mater. Res., vol. 15, No. 3, Mar. 2000, pp. 704-717.
Tomar, V.K., et al., “Depositions and characterization of SiOn using HMDS for Photonics applications,” abstract, obtained on Oct. 16, 2007 from website http://www.iop.org/EJ/abstract/0268-1242/22/2/008, 2 pages.
Wikipedia, “Microstrip”, obtained online at http://en.wikipedia.org/wiki/Microstrip on Jan. 25, 2008, 5 pages.
Wikipedia, “Microwave”, obtained online at http://en.wikipedia.org/wiki/Microwave on Dec. 13, 2007, 7 pages.
Zajickova, L. et al., “Deposition of protective coatings in rf organosilicon discharges,” abstract, obtained on Oct. 16, 2007 on website http://www.iop.org.EJ/abstract/0963-0252/16/1/S14, 2 pages.

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