Microwave plasma processor

Details Microwave plasma processor Microwave plasma processor

1997-12-29

2000-01-25

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MA, 156345, 31511121, 31511141, C23C 1600

Patent

active

060167661

ABSTRACT:
Ionizable gas supplied to an electron cyclotron resonance vacuum plasma processor chamber for semiconductor wafers is excited to a plasma state by microwave energy coupled to the chamber. The level of microwave power reflected from the chamber controls the level of microwave power derived from a source driving the ionizable gas in the chamber.

REFERENCES:
patent: 5003152 (1991-03-01), Matsuo
patent: 5111111 (1992-05-01), Stevens
patent: 5115167 (1992-05-01), Ootera
patent: 5179264 (1993-01-01), Cuomo et al.
patent: 5282899 (1994-02-01), Balmashnov

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