Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1995-05-18
1999-06-22
Powell, William
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
156345, 118723MW, H01L 21302, B65D 634, C23F 102
Patent
active
059140518
ABSTRACT:
A microwave plasma processing method and apparatus of the type wherein a waveguide section includes electric discharge means isolated from a waveguide for the propagation of microwaves and having a plasma generation region therein, which method and apparatus are well suited for subjecting samples, such as semiconductor device substrates, to an etching process, a film forming process, etc. The microwaves are introduced into the electric discharge means in correspondence with only the traveling direction thereof, whereby uniformity in a plasma density distribution corresponding to the surface to-be-processed of the sample can be sharply enhanced, so that the sample processed by utilizing such plasma can attain an enhanced processing homogeneity within the surface to-be-processed. The temperature of the electric discharge block is controlled to decrease an amount of plasma polymers deposited on the electric discharge block, increase an amount existing in the plasma and increase an amount deposited on the sample to improve a selection ratio.
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Ichihashi Kazuaki
Kanai Saburo
Kawasaki Yoshinao
Nawata Makoto
Watanabe Seiichi
Goudreau George
Hitachi , Ltd.
Powell William
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