Microwave plasma processing apparatus using a hybrid microwave h

Details Microwave plasma processing apparatus using a hybrid microwave h Microwave plasma processing apparatus using a hybrid microwave h

1997-09-24

1999-02-23

Paschall, Mark H.

Electric heating

Metal heating

By arc

21912152, 156345, 118723MN, 20429838, B23K 1000

Patent

active

058747060

ABSTRACT:
An ECR type plasma processing apparatus including an airtight processing chamber and a work table for supporting a semiconductor wafer thereon disposed in the processing chamber. The interior of the processing chamber is exhausted to a vacuum by an exhaust system and an active gas such as CF.sub.4 gas and an inert gas such as Ar gas are supplied into the processing chamber through nozzles. Further, a magnet is disposed around the processing chamber to generate a magnetic field perpendicular to the upper surface of the wafer and a microwave transmitting window is disposed in the ceiling of the processing chamber. Also, a microwave generated by a microwave generator is introduced into the transmitting window through a rectangular waveguide, a mode converter, and a tapered waveguide. The microwave is transmitted through the rectangular waveguide in the TE.sub.10 mode, is converted into a hybrid wave of two mode waves, i.e., a TM.sub.01 -mode wave and a TE.sub.11 -mode wave, by the mode converter, and is transmitted to the tapered waveguide.

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