Microwave plasma processing apparatus

Details Microwave plasma processing apparatus Microwave plasma processing apparatus

1995-02-27

1997-12-23

Tsai, Jey

Coating apparatus

Gas or vapor deposition

With treating means

118723ME, 118723MA, C23C 1600

Patent

active

057003262

ABSTRACT:
A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

REFERENCES:
patent: 4951602 (1990-08-01), Kanai
patent: 5010276 (1991-04-01), Echizen et al.
patent: 5030476 (1991-07-01), Okamura et al.
patent: 5074985 (1991-12-01), Tamura et al.
patent: 5188862 (1993-02-01), Itatani et al.
patent: 5266146 (1993-11-01), Ohno
patent: 5270616 (1993-12-01), Itatani
patent: 5276386 (1994-01-01), Watanabe
Japanese abstract JA 0298106, Hiroyki Uchida, Dec. 1987.
Patent abstract SU 0863716 Mosc Aviat Tech Ins, Sep. 1981.

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