Microwave plasma processing apparatus

Details Microwave plasma processing apparatus Microwave plasma processing apparatus

1990-01-22

1991-06-18

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429807, 156345, C23C 1400

Patent

active

050247484

ABSTRACT:
A microwave plasma processing apparatus used for etching or ashing processes of a semiconductor substrate, comprising a plasma generation chamber, into which a reactive gas and microwave power are introduced, a reaction chamber in which the substrate is disposed for processing, and a plasma shield plate separating the reaction chamber from the plasma generation chamber, the plasma shield plate being of electrically conductive material and having at least a hole for flowing the plasma into the reaction chamber and forming a portion of the plasma generation chamber. The microwave plasma processing apparatus of the invention further comprises a cover member disposed on a surface of the plasma shield plate facing the plasma generation chamber and made of inactive material with active species included in the plasma such as quartz and alumina ceramic.

REFERENCES:
patent: 4512868 (1985-04-01), Fujimura et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4631105 (1986-12-01), Carroll et al.
patent: 4718976 (1988-01-01), Fujimura
patent: 4820370 (1989-04-01), Ellenberger
patent: 4901667 (1990-02-01), Suzuki et al.
patent: 4931135 (1990-06-01), Horiuchi et al.

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