Microwave plasma etching

Details Microwave plasma etching Microwave plasma etching

1983-01-19

1984-07-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 204192E, 204298, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

044628633

ABSTRACT:
A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space and provided with an inlet for introducing a discharge gas containing a fluorine-containing gas, hydrogen and oxygen, magnetic field forming means for forming a magnetic field in the discharge space, microwave electric field forming means for forming a microwave electric field in the discharge space, and substrates holding means for holding substrates to be processed in the vacuum chamber. In the microwave plasma etching, the discharge gas containing fluorine, hydrogen with or without oxygen provides excellent etching almost free from side etching.

REFERENCES:
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4283249 (1981-08-01), Ephrath
patent: 4324611 (1982-04-01), Vogel et al.
patent: 4330384 (1982-05-01), Okudaira et al.

Affiliated with

Also associated with

Rating

Microwave plasma etching does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Microwave plasma etching, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microwave plasma etching will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-184382